Technology viable DC performance elements for Si/SiGe channel CMOS FinFTT
- G. Tsutsui
- Ruqiang Bao
- et al.
- 2016
- IEDM 2016
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14 results for G. Karve
A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications
- S. Krishnan
- U. Kwon
- et al.
- 2011
- IEDM 2011
Bias Temperature Instability Reliability in Stacked Gate-All-Around Nanosheet Transistor
- Miaomiao Wang
- Jingyun Zhang
- et al.
- 2019
- IRPS 2019
Failure isolation in ring oscillator circuit and defect detection in CMOS technology research
- Victor Chan
- M. Bergendahl
- et al.
- 2019
- ASMC 2019
Study of titanium nitride underlayer properties and its influence on tungsten growth
- Shanti Pancharatnam
- J. Wynne
- et al.
- 2018
- ASMC 2018
Ring oscillator yield learning methodologies for CMOS technology research
- Victor Chan
- D. Lea
- et al.
- 2018
- ASMC 2018
SiGe FinFET for practical logic libraries by mitigating local layout effect
- G. Tsutsui
- Huimei Zhou
- et al.
- 2017
- VLSI Technology 2017
FINFET technology featuring high mobility SiGe channel for 10nm and beyond
- Dechao Guo
- G. Karve
- et al.
- 2016
- VLSI Technology 2016
Study of dark counts in Geiger mode in 0.53Ga 0.47As / in 0.52Al 0.48gAs SACM APDs
- G. Karve
- S. Wang
- et al.
- 2004
- LEOS 2004
In0.53Ga0.47As/In0.52Al0.48A s SACM APDs for single photon detection
- G. Karve
- X. Zheng
- et al.
- 2003
- LEOS 2003