Ruqiang Bao, K. Watanabe, et al.
VLSI Technology 2020
The changes in tungsten (W) film growth and resistance are studied using different titanium nitride (TiN) underlayer films. Different precursors and processes used for TiN deposition affect the W growth and film properties. It is important to monitor the changes in incoming TiN resistance as a part of W process qualification. This enables maintaining W process stability and reducing fab downtime due to false fails.
Ruqiang Bao, K. Watanabe, et al.
VLSI Technology 2020
Shanti Pancharatnam, Wei Tsu Tseng, et al.
ECS J. Solid State Sci. Technol.
Shanti Pancharatnam, Gabriel Rodriguez, et al.
IEEE Trans Semicond Manuf
Ruqiang Bao, Reinaldo A. Vega, et al.
IEDM 2019