Influence of the SiO2 layer thickness on the degradation of HfO2/SiO2 stacks subjected to static and dynamic stress conditions
- E. Amat
- R. Rodríguez
- et al.
- 2007
- Microelectronics Reliability
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12 results for R. Rodríguez
Worn-out oxide MOSFET characteristics: Role of gate current and device parameters on a current mirror
- J. Martín-Martínez
- R. Rodríguez
- et al.
- 2007
- Microelectronics Reliability
Effect and model of gate oxide breakdown on CMOS inverters
- R. Rodríguez
- J.H. Stathis
- et al.
- 2003
- INFOS 2003
Oxide breakdown model and its impact on SRAM cell functionality
- R. Rodríguez
- R.V. Joshi
- et al.
- 2003
- SISPAD 2003
Influence and model of gate oxide breakdown on CMOS inverters
- R. Rodríguez
- J.H. Stathis
- et al.
- 2003
- Microelectronics Reliability
Reliability of ultra-thin oxides in CMOS circuits
- J.H. Stathis
- B.P. Linder
- et al.
- 2003
- Microelectronics Reliability
Circuit implications of gate oxide breakdown
- J.H. Stathis
- R. Rodríguez
- et al.
- 2003
- Microelectronics Reliability
Modeling and experimental verification of the effect of gate oxide breakdown on CMOS inverters
- R. Rodríguez
- J.H. Stathis
- et al.
- 2003
- IRPS 2003
Modeling and experimental verification of the effect of gate oxide breakdown on CMOS inverters
- R. Rodríguez
- J.H. Stathis
- et al.
- 2003
- IRPS 2003
A model for gate-oxide breakdown in CMOS inverters
- R. Rodríguez
- J.H. Stathis
- et al.
- 2003
- IEEE Electron Device Letters