Confinement and integration of magnetic impurities in silicon
- Frank J. Rueß
- Mario El Kazzi
- et al.
- 2013
- Applied Physics Letters
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106 results for Lukas Czornomaz
CMOS compatible self-aligned S/D regions for implant-free InGaAs MOSFETs
- L. Czornomaz
- M. El Kazzi
- et al.
- 2012
- Solid-State Electronics
Physical characterization of sub-32-nm semiconductor materials and processes using advanced ion beam-based analytical techniques
- M. Hopstaken
- D. Pfeiffer
- et al.
- 2012
- Surface and Interface Analysis
Thermally stable, sub-nanometer equivalent oxide thickness gate stack for gate-first In 0.53Ga 0.47As metal-oxide-semiconductor field-effect-transistors
- Mario El Kazzi
- Lukas Czornomaz
- et al.
- 2012
- Applied Physics Letters
Sub-nm equivalent oxide thickness on Si-passivated GaAs capacitors with low Dit
- Mario El Kazzi
- Lukas Czornomaz
- et al.
- 2011
- Applied Physics Letters
1.2 nm capacitance equivalent thickness gate stacks on Si-passivated GaAs
- M. El Kazzi
- D.J. Webb
- et al.
- 2011
- Microelectronic Engineering