Back-gated InGaAs-on-insulator lateral N+NN+ MOSFET: Fabrication and typical conduction mechanisms
- H.J. Park
- L. Pirro
- et al.
- 2017
- Solid-State Electronics
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106 results for Lukas Czornomaz
DC and RF characterization of InGaAs replacement metal gate (RMG) nFETs on SiGe-OI FinFETs fabricated by 3D monolithic integration
- Veeresh Deshpande
- V. Djara
- et al.
- 2017
- Solid-State Electronics
Elucidating the Surface Reactions of an Amorphous Si Thin Film as a Model Electrode for Li-Ion Batteries
- Giulio Ferraresi
- Lukas Czornomaz
- et al.
- 2016
- ACS AMI
Characterization of spin-orbit fields in InGaAs quantum wells
- T. Henn
- Lukas Czornomaz
- et al.
- 2016
- Applied Physics Letters
First demonstration of InGaAs/SiGe CMOS inverters and dense SRAM arrays on Si using selective epitaxy and standard FEOL processes
- Lukas Czornomaz
- V. Djara
- et al.
- 2016
- VLSI Technology 2016
Theoretical and experimental analysis of capacitance and mobility in InGaAs
- F.M. Bufler
- M. Frey
- et al.
- 2016
- DRC 2016
Fabrication and characterization of InGaAs-on-insulator lateral N+/n/N+ structures
- Lukas Czornomaz
- V. Djara
- et al.
- 2016
- EUROSOI-ULIS 2016
First RF characterization of InGaAs replacement metal gate (RMG) nFETs on SiGe-OI FinFETs fabricated by 3D monolithic integration
- Veeresh Deshpande
- V. Djara
- et al.
- 2016
- EUROSOI-ULIS 2016
CMOS-compatible replacement metal gate InGaAs-OI FinFET With ION=156μA/μm at VDD= 0.5V and IOFF=100nA/μm
- V. Djara
- Veeresh Deshpande
- et al.
- 2016
- IEEE Electron Device Letters
Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal
- V. Djara
- Lukas Czornomaz
- et al.
- 2016
- Solid-State Electronics