Strain effects on n-InGaAs heterostructure-on-insulator made by direct wafer bonding
- Christophe Rossel
- P. Weigele
- et al.
- 2014
- Solid-State Electronics
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138 results for Daniele Caimi
Controlling tetragonality and crystalline orientation in BaTiO3 nano-layers grown on Si
- Stefan Abel
- Marilyne Sousa
- et al.
- 2013
- Nanotechnology
Heterointegration by molecular beam epitaxy: (In, Ga)As/GaAs quantum wells on GaAs, Ge, Ge/Si and Ge/Si pillars
- M. Richter
- Emanuele Uccelli
- et al.
- 2013
- Journal of Crystal Growth
CMOS compatible self-aligned S/D regions for implant-free InGaAs MOSFETs
- L. Czornomaz
- M. El Kazzi
- et al.
- 2012
- Solid-State Electronics
Thermally stable, sub-nanometer equivalent oxide thickness gate stack for gate-first In 0.53Ga 0.47As metal-oxide-semiconductor field-effect-transistors
- Mario El Kazzi
- Lukas Czornomaz
- et al.
- 2012
- Applied Physics Letters
Mobility and Dit distributions for p-channel MOSFETs with HfO 2/LaGeO x passivating layers on germanium
- C. Andersson
- M.J. Süess
- et al.
- 2011
- Journal of Applied Physics
Sub-nm equivalent oxide thickness on Si-passivated GaAs capacitors with low Dit
- Mario El Kazzi
- Lukas Czornomaz
- et al.
- 2011
- Applied Physics Letters
1.2 nm capacitance equivalent thickness gate stacks on Si-passivated GaAs
- M. El Kazzi
- D.J. Webb
- et al.
- 2011
- Microelectronic Engineering
GaAs on 200 mm Si wafers via thin temperature graded Ge buffers by molecular beam epitaxy
- M. Richter
- Christophe Rossel
- et al.
- 2011
- Journal of Crystal Growth
Lanthanum germanate as dielectric for scaled Germanium metal-oxide-semiconductor devices
- C. Andersson
- C. Rossel
- et al.
- 2009
- Microelectronic Engineering