SiGe pMODFETs on silicon-on-sapphire substrates with 116 GHz fmax
- S.J. Koester
- R. Hammond
- et al.
- 2001
- IEEE Electron Device Letters
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8 results for Isaac Lagnado
Hole confinement and low-frequency noise in SiGe pFET's on silicon-on-sapphire
- Suraj J. Mathew
- Guofu Niu
- et al.
- 1999
- IEEE Electron Device Letters
Low-noise SiGe pMODFETs on sapphire with 116 GHz fmax
- S.J. Koester
- R. Hammond
- et al.
- 2000
- DRC 2000
Silicon-on-sapphire for RF Si systems 2000
- I. Lagnado
- P.R. De La Houssaye
- et al.
- 2000
- SiRF 2000
1.0-V and 1.5-V operation of 4-GHz tuned amplifiers implemented in a 0.1-μm CMOS technology on bulk and SOI substrates
- Yo-Chuol Ho
- C. Wann
- et al.
- 1998
- SiRF 1998
A 23.8-GHz SOI CMOS tuned amplifier
- Brian A. Floyd
- Leathen Shi
- et al.
- 2002
- IEEE T-MTT
A 26.5 GHz Silicon MOSFET 2:1 Dynamic Frequency Divider
- Matt Wetzel
- Leathen Shi
- et al.
- 2000
- IEEE Microwave and Guided Wave Letters
4- and 13-GHz tuned amplifiers implemented in a 0.1-μm CMOS technology on SOI, SOS, and bulk substrates
- Yo-Chuol Ho
- Ki-Hong Kim
- et al.
- 1998
- IEEE Journal of Solid-State Circuits