Improved DC and RF performance in Si/SiGe n-MODFETs with ion-implanted buried p-well doping
- S.J. Koester
- K.L. Saenger
- et al.
- 2005
- IEEE Electron Device Letters
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15 results for James Tornello
Laterally scaled Si-Si0.7Ge0.3 n-MODFETs with fmax > 200 GHz and low operating bias
- S.J. Koester
- K.L. Saenger
- et al.
- 2005
- IEEE Electron Device Letters
FinFET performance advantage at 22nm: An AC perspective
- M. Guillorn
- J. Chang
- et al.
- 2008
- VLSI Technology 2008
Advanced chemical-mechanical planarization (CMP) for enabling silicon carrier integration with through-vias and fine pitch wiring
- Cornelia K. Tsang
- Donald F. Canaperi
- et al.
- 2006
- CMP-MIC 2006
Silicon-on-insulator MOSFETs with hybrid crystal orientations
- M. Yang
- K.K. Chan
- et al.
- 2006
- VLSI Technology 2006
Laterally-scaled Si/SiGe n-MODFETs with in situ and ion-implanted p-well doping
- S.J. Koester
- K.L. Saenger
- et al.
- 2004
- DRC 2004
SiGe MODFETS: Overview and issues for sub-100 nm gate-length scaling
- S.J. Koester
- K.L. Saenger
- et al.
- 2004
- ECS Meeting 2004
Simultaneous fabrication of RF MEMS switches and resonators using copper-based CMOS interconnect manufacturing methods
- C.V. Jahnes
- J.M. Cotte
- et al.
- 2004
- MEMS 2004
High-performance SiGe MODFET technology
- S.J. Koester
- J.O. Chu
- et al.
- 2004
- MRS Proceedings 2004
CMOS-Compatible Wearable Sensors Fabricated Using Controlled Spalling
- Katsuyuki Sakuma
- Huan Hu
- et al.
- 2019
- IEEE Sensors Journal