Opportunities and challenges in ultra low k dielectrics for interconnect applications
- S. Purushothaman
- S.V. Nitta
- et al.
- 2001
- Technical Digest-International Electron Devices Meeting
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119 results for Stephan A. Cohen
Gate oxide breakdown under Current Limited Constant Voltage Stress
- B.P. Linder
- J.H. Stathis
- et al.
- 2000
- Digest of Technical Papers-Symposium on VLSI Technology
Open volume defects (measured by positron annihilation spectroscopy) in thin film hydrogen-silsesquioxane spin-on-glass; correlation with dielectric constant
- Mihail P. Petkov
- Marc H. Weber
- et al.
- 1999
- Journal of Applied Physics
Doppler broadening positron annihilation spectroscopy: A technique for measuring open-volume defects in silsesquioxane spin-on glass films
- Mihail P. Petkov
- Marc H. Weer
- et al.
- 1999
- Applied Physics Letters
Use of SiBN and SiBON films prepared by plasma enhanced chemical vapor deposition from borazine as interconnection dielectrics
- W.F. Kone
- S. Cohen
- et al.
- 1997
- JES
Adhesion of poly(arylene ether benzimidazole) to copper and polyimides
- K.-W. Lee
- A. Viehbeck
- et al.
- 1996
- Journal of Adhesion Science and Technology
Lithography and fabrication processes for sub-100 nm scale complementary metal-oxide semiconductor
- S.J. Wind
- Y. Taur
- et al.
- 1995
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Electrical resistivities of diamond-like carbon
- A. Grill
- V.V. Patel
- et al.
- 1994
- Diamond and Related Materials
Low pressure chemical vapor deposition of oxide from SiH4/O 2: Chemistry and effects on electrical properties
- M. Liehr
- S. Cohen
- 1992
- Applied Physics Letters
Sputtered tungsten for deep submicroncomplementary metal-oxide-semiconductor technology
- L. Dori
- A.C. Megdanis
- et al.
- 1990
- Thin Solid Films