Improved frequency response in a SiGe npn device through improved dopant activation
- Jim Adkisson
- Marwan H. Khater
- et al.
- 2012
- ECS Meeting 2012
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34 results for Oleg Gluschenkov
Performance elements for 28nm gate length bulk devices with gate first high-k metal gate
- Jun Yuan
- C. Gruensfelder
- et al.
- 2010
- ICSICT 2010
Advanced junction formation for Sub-32nm logic devices
- Sadanand V. Deshpande
- Ahmet Ozcan
- et al.
- 2010
- IWJT 2010
Electron holography for 2-D dopant profiling
- Michael A. Gribelyuk
- Jun Yuan
- et al.
- 2009
- IWJT 2009
Reduction of RTA-driven intra-die variation via model-based layout optimization
- J.C. Scott
- O. Gluschenkov
- et al.
- 2009
- VLSI Technology 2009
A 45nm low power bulk technology featuring carbon co-implantation and laser anneal on 45°-rotated substrate
- J. Yuan
- V. Chan
- et al.
- 2008
- ICSICT 2008
Strained Si channel MOSFETs with embedded silicon carbon formed by solid phase epitaxy
- Yaocheng Liu
- Oleg Gluschenkov
- et al.
- 2007
- VLSI Technology 2007
Improving the power-performance of multicore processors through optimization of lithography and thermal processing
- A. Gabor
- T.A. Brunner
- et al.
- 2007
- SPIE Advanced Lithography 2007
RTA-driven intra-die variations in stage delay, and parametric sensitivities for 65nm technology
- I. Ahsan
- N. Zamdmer
- et al.
- 2006
- VLSI Technology 2006
Ultra-thin SOI CMOS using laser spike anneal
- Zhibin Ren
- J. Sleight
- et al.
- 2006
- VLSI-TSA 2006