RTA-driven intra-die variations in stage delay, and parametric sensitivities for 65nm technologyI. AhsanN. Zamdmeret al.2006VLSI Technology 2006
Design of high performance PFETs with strained Si channel and laser annealZ. LuoY.F. Chonget al.2005IEDM 2005
Thermally robust dual-work function ALD-MN x MOSFETs using conventional CMOS process flowD.-G. ParkZ. Luoet al.2004VLSI Technology 2004
Performance dependence of CMOS on silicon substrate orientation for ultrathin oxynitride and HfO2 gate dielectricsMin YangEvgeni P. Gusevet al.2003IEEE Electron Device Letters