UV cure impact on robust low-k with sub-nm pores and high carbon content for high performance Cu/low-k BEOL modules
- N. Inoue
- F. Ito
- et al.
- 2013
- IITC 2013
Publications
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34 results for E. T. Ryan
Tailoring dielectric materials for robust BEOL reliability
- G. Bonilla
- T.M. Shaw
- et al.
- 2012
- IRPS 2012
Designing porous ultra low-κ dielectrics to meet scaling challenges
- E. Todd Ryan
- Steve Gates
- et al.
- 2011
- ADMETA 2011
Optimization of porous ultra low- dielectrics (κ≤ 2.55) for 28nm generation
- D. Kioussis
- E.T. Ryan
- et al.
- 2011
- IITC/MAM 2011
Effective Cu surface pre-treatment for high-reliable 22nm-node Cu dual damascene interconnects with high plasma resistant ultra low-k dielectric (k=2.2)
- F. Ito
- H. Shobha
- et al.
- 2010
- ADMETA 2010
Competitive and cost effective copper/low-k interconnect (BEOL) for 28nm CMOS technologies
- Rod Augur
- Craig Child
- et al.
- 2010
- ADMETA 2010
Integration compatible porous SiCOH dielectrics from 45 to 22 nm
- S. Gates
- A. Grill
- et al.
- 2008
- ADMETA 2008
Use of difunctional silylation agents for enhanced repair of post plasma damaged porous low k dielectrics
- S.V. Nitta
- S. Purushothaman
- et al.
- 2005
- AMC 2005
An evaluation of Fuchs-Sondheimer and Mayadas-Shatzkes models below 14nm node wide lines
- R. S. Smith
- E. T. Ryan
- et al.
- 2019
- AIP Advances
Tailoring capping layers to reduce stress gradients in copper metallization
- Conal E. Murray
- Deepika Priyadarshini
- et al.
- 2016
- Applied Physics Letters