SiGe pMODFETs on silicon-on-sapphire substrates with 116 GHz fmax
- S.J. Koester
- R. Hammond
- et al.
- 2001
- IEEE Electron Device Letters
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236 results for Keith A. Jenkins
Noise performance and considerations for integrated RF/analog/mixed-signal design in a high-performance SiGe BiCMOS technology
- D.R. Greenberg
- S. Sweeney
- et al.
- 2001
- Technical Digest - International Electron Devices Meeting
Asynchronous interlocked pipelined CMOS circuits operating at 3.3-4.5Ghz
- S.E. Schuster
- W. Reohr
- et al.
- 2000
- ISSCC 2000
Silicon-on-sapphire for RF Si systems 2000
- I. Lagnado
- P.R. De La Houssaye
- et al.
- 2000
- SiRF 2000
Measuring Jitter and Phase Error in Microprocessor Phase-Locked Loops
- Keith A. Jenkins
- James P. Eckhardt
- 2000
- IEEE Design and Test of Computers
A 26.5 GHz Silicon MOSFET 2:1 Dynamic Frequency Divider
- Matt Wetzel
- Leathen Shi
- et al.
- 2000
- IEEE Microwave and Guided Wave Letters
RF potential of a 0.18-μm CMOS logic device technology
- Joachim N. Burghartz
- Michael Hargrove
- et al.
- 2000
- IEEE Transactions on Electron Devices
A high aspect-ratio silicon substrate-via technology and applications: Through-wafer interconnects for power and ground and faraday cages for SOC isolation
- Joyce H. Wu
- Jesds A. Del Alamo
- et al.
- 2000
- Technical Digest - International Electron Devices Meeting
High-performance SiGe pMODFETs grown by UHV-CVD
- S.J. Koester
- R. Hammond
- et al.
- 1999
- EDMO 1999
RF circuit design aspects of spiral inductors on silicon
- Joachim N. Burghartz
- D. Edelstein
- et al.
- 1998
- IEEE Journal of Solid-State Circuits