Gate-Last IO Transistors based on Stacked Gate-All-Around Nanosheet Architecture for Advanced Logic Technologies
- M. Bhuiyan
- M. Kim
- et al.
- 2021
- IEDM 2021
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11 results for M. Stolfi
Advanced Arsenic Doped Epitaxial Growth for Source Drain Extension Formation in Scaled FinFET Devices
- Shogo Mochizuki
- B. Colombeau
- et al.
- 2018
- IEDM 2018
Enabling Next Generation CMOS by Novel EOT Scaling Module
- Lin Dong
- Steven Hung
- et al.
- 2021
- VLSI Technology 2021
Dual Damascene BEOL Extendibility With Cu Reflow / Selective TaN And Co/Cu Composite
- P. Bhosale
- N. Lanzillo
- et al.
- 2021
- VLSI Technology 2021
Composite Interconnects for High-Performance Computing beyond the 7nm Node
- P. Bhosale
- S. Parikh
- et al.
- 2020
- VLSI Technology 2020
Structural and Electrical Demonstration of SiGe Cladded Channel for PMOS Stacked Nanosheet Gate-All-Around Devices
- Shogo Mochizuki
- B. Colombeau
- et al.
- 2020
- VLSI Technology 2020
Modified ALD TaN Barrier with Ru Liner and Dynamic Cu Reflow for 36nm Pitch Interconnect Integration
- P. Bhosale
- J. Maniscalco
- et al.
- 2018
- IITC 2018
Development of amorphous silicon based EUV hardmasks through physical vapor deposition
- Anuja De Silva
- Yann Mignot
- et al.
- 2017
- SPIE Photomask Technology + EUV Lithography 2017
Highly-selective superconformai CVD Ti silicide process enabling area-enhanced contacts for next-generation CMOS architectures
- Nicolas Breil
- A. Carr
- et al.
- 2017
- VLSI Technology 2017
Optimizing ULK film properties to enable BEOL integration with TDDB reliability
- E. T. Ryan
- Deepika Priyadarshini
- et al.
- 2015
- IITC/MAM 2015