New Phase-Change Materials by Atomic-Level Engineering the Dopants for Extremely Low VthDrift at 85 °C and High Endurance 3D Crosspoint Memory : IBM/Macronix PCRAM Joint Project
- Huai-Yu Cheng
- A. Grun
- et al.
- 2022
- IEDM 2022
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16 results for C. Yeh
An ultra high endurance and thermally stable selector based on TeAsGeSiSe chalcogenides compatible with BEOL IC Integration for cross-point PCM
- Huai-Yu Cheng
- W. Chien
- et al.
- 2017
- IEDM 2017
Reliability study of a 128Mb phase change memory chip implemented with doped Ga-Sb-Ge with extraordinary thermal stability
- W. Chien
- Huai-Yu Cheng
- et al.
- 2016
- IEDM 2016
Novel fast-switching and high-data retention phase-change memory based on new Ga-Sb-Ge material
- Huai-Yu Cheng
- W. Chien
- et al.
- 2015
- IEDM 2015
A Comprehensive Study on the Pillar Size of OTS-PCM Memory with an Optimized Process and Scaling Trends Down to Sub-10 nm for SCM Applications
- W. Chien
- E. Lai
- et al.
- 2023
- IMW 2023
Endurance Evaluation on OTS-PCM Device using Constant Current Stress Scheme
- W. Chien
- Lynne Gignac
- et al.
- 2022
- IRPS 2022
Device Study on OTS-PCM for Persistent Memory Application : IBM/Macronix Phase Change Memory Joint Project
- W. Chien
- Lynne Gignac
- et al.
- 2022
- EDTM 2022
A no-verification Multi-Level-Cell (MLC) operation in Cross-Point OTS-PCM
- Nanbo Gong
- W. Chien
- et al.
- 2020
- VLSI Technology 2020
Si Incorporation Into AsSeGe Chalcogenides for High Thermal Stability, High Endurance and Extremely Low Vth Drift 3D Stackable Cross-point Memory
- Huai-Yu Cheng
- I. Kuo
- et al.
- 2020
- VLSI Technology 2020
Comprehensive Scaling Study on 3D Cross-Point PCM toward 1Znm Node for SCM Applications
- W. Chien
- H. Ho
- et al.
- 2019
- VLSI Technology 2019