New Phase-Change Materials by Atomic-Level Engineering the Dopants for Extremely Low VthDrift at 85 °C and High Endurance 3D Crosspoint Memory : IBM/Macronix PCRAM Joint Project
- Huai-Yu Cheng
- A. Grun
- et al.
- 2022
- IEDM 2022
Publications
Date
Featured collections
Popular topics
58 results for A. Ray
An ultra high endurance and thermally stable selector based on TeAsGeSiSe chalcogenides compatible with BEOL IC Integration for cross-point PCM
- Huai-Yu Cheng
- W. Chien
- et al.
- 2017
- IEDM 2017
ALD-based confined PCM with a metallic liner toward unlimited endurance
- Wanki Kim
- Matthew BrightSky
- et al.
- 2016
- IEDM 2016
Reliability study of a 128Mb phase change memory chip implemented with doped Ga-Sb-Ge with extraordinary thermal stability
- W. Chien
- Huai-Yu Cheng
- et al.
- 2016
- IEDM 2016
Crystalline-as-deposited ALD phase change material confined PCM cell for high density storage class memory
- Matthew Bright Sky
- Norma Sosa
- et al.
- 2015
- IEDM 2015
NVM neuromorphic core with 64k-cell (256-by-256) phase change memory synaptic array with on-chip neuron circuits for continuous in-situ learning
- Sangbum Kim
- Masatoshi Ishii
- et al.
- 2015
- IEDM 2015
Novel fast-switching and high-data retention phase-change memory based on new Ga-Sb-Ge material
- Huai-Yu Cheng
- W. Chien
- et al.
- 2015
- IEDM 2015
Atomic-level engineering of phase change material for novel fast-switching and high-endurance PCM for storage class memory application
- H.Y. Cheng
- Matthew Brightsky
- et al.
- 2013
- IEDM 2013
Highly Manufacturable 40-50 GHz VCOs in a 120nm System-on-Chip SOI Technology
- Jonghae Kim
- Jean-Olivier Plouchart
- et al.
- 2003
- IEDM 2003
High-performance sub-0.08 μm CMOS with dual gate oxide and 9.7 ps inverter delay
- M. Hargrove
- S.W. Crowder
- et al.
- 1998
- IEDM 1998