Trade-offs in the integration of high performance devices with trench capacitor DRAM
- S.W. Crowder
- S. Stiffler
- et al.
- 1997
- IEDM 1997
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58 results for A. Ray
A High-Density 6.9 sq. pm Embedded SRAM Cell in a High-Performance 0.25 μm-Generation CMOS Logic Technology
- S. Subbanna
- P. Agnello
- et al.
- 1996
- IEDM 1996
A Comprehensive Study on the Pillar Size of OTS-PCM Memory with an Optimized Process and Scaling Trends Down to Sub-10 nm for SCM Applications
- W. Chien
- E. Lai
- et al.
- 2023
- IMW 2023
Endurance Evaluation on OTS-PCM Device using Constant Current Stress Scheme
- W. Chien
- Lynne Gignac
- et al.
- 2022
- IRPS 2022
Device Study on OTS-PCM for Persistent Memory Application : IBM/Macronix Phase Change Memory Joint Project
- W. Chien
- Lynne Gignac
- et al.
- 2022
- EDTM 2022
A no-verification Multi-Level-Cell (MLC) operation in Cross-Point OTS-PCM
- Nanbo Gong
- W. Chien
- et al.
- 2020
- VLSI Technology 2020
Si Incorporation Into AsSeGe Chalcogenides for High Thermal Stability, High Endurance and Extremely Low Vth Drift 3D Stackable Cross-point Memory
- Huai-Yu Cheng
- I. Kuo
- et al.
- 2020
- VLSI Technology 2020
Solution for PCM and OTS intermixing on cross-point phase change memory
- W. Chien
- Lynne Gignac
- et al.
- 2019
- IMW 2019
Superb endurance and appropriate Vth of PCM pillar cell using buffer layer for 3D cross-point memory
- N. Gang
- W. Chien
- et al.
- 2019
- IMW 2019
High endurance self-heating OTS-PCM pillar cell for 3D stackable memory
- C. Yeh
- W. Chien
- et al.
- 2018
- VLSI Technology 2018