A Power-Optimized Widely-Tunable 5-GHz Monolithic VCO in a Digital SOI CMOS Technology on High Resistivity Substrate
- Jonghae Kim
- Jean-Olivier Plouchart
- et al.
- 2003
- ISLPED 2003
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58 results for A. Ray
3-Dimensional Vertical Parallel Plate Capacitors in an SOI CMOS Technology for Integrated RF Circuits
- Jonghae Kim
- Jean-Olivier Plouchart
- et al.
- 2003
- VLSI Circuits 2003
A 0.123 mW 7.25 GHz static frequency divider by 8 in a 120-nm SOI technology
- J.O. Plouchart
- Jonghae Kim
- et al.
- 2003
- ISLPED 2003
A 0.123 mW 7.25 GHz Static Frequency Divider by 8 in a 120-nm SOI Technology
- Jean-Olivier Plouchart
- Jonghae Kim
- et al.
- 2003
- ISLPED 2003
High-performance three-dimensional on-chip inductors in SOI CMOS technology for monolithic RF circuit applications
- Jonghae Kim
- Jean-Olivier Plouchart
- et al.
- 2003
- RFIC 2003
A power-efficient 33 GHz 2:1 static frequency divider in 0.12-μm SOI CMOS
- Jean-Olivier Plouchart
- Jonghae Kim
- et al.
- 2003
- RFIC 2003
High-performance three-dimensional on-chip inductors in SOI CMOS technology for monolithic RF circuit applications
- Jonghae Kim
- Jean-Olivier Plouchart
- et al.
- 2003
- IMS 2003
Suitability of scaled SOI CMOS for high-frequency analog circuits
- N. Zamdmer
- J.O. Plouchart
- et al.
- 2002
- ESSDERC 2002
High-performance 0.08 μm CMOS
- L. Su
- S. Subbanna
- et al.
- 1996
- VLSI Technology 1996
A 0.5 μm fully scaled two-level metal fully planarized interconnect structure fabricated with X-ray lithography
- D. Moy
- L.K. Wang
- et al.
- 1990
- VLSI Technology 1990