A Novel Dry Selective Etch of SiGe for the Enablement of High Performance Logic Stacked Gate-All-Around NanoSheet Devices
- Nicolas Loubet
- T. Devarajan
- et al.
- 2019
- IEDM 2019
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12 results for K. Watanabe
Multiple-Vt Solutions in Nanosheet Technology for High Performance and Low Power Applications
- Ruqiang Bao
- Reinaldo A. Vega
- et al.
- 2019
- IEDM 2019
Hot carrier effect in ultra-scaled replacement metal gate Sii-xGex channel p-FinFETs
- Miaomiao Wang
- X. Miao
- et al.
- 2016
- IEDM 2016
Technology viable DC performance elements for Si/SiGe channel CMOS FinFTT
- G. Tsutsui
- Ruqiang Bao
- et al.
- 2016
- IEDM 2016
Structural and Electrical Demonstration of SiGe Cladded Channel for PMOS Stacked Nanosheet Gate-All-Around Devices
- Shogo Mochizuki
- B. Colombeau
- et al.
- 2020
- VLSI Technology 2020
Selective Enablement of Dual Dipoles for near Bandedge Multi-Vt Solution in High Performance FinFET and Nanosheet Technologies
- Ruqiang Bao
- K. Watanabe
- et al.
- 2020
- VLSI Technology 2020
NBTI Impact of Surface Orientation in Stacked Gate-All-Around Nanosheet Transistor
- Huimei Zhou
- Miaomiao Wang
- et al.
- 2020
- IRPS 2020
A new technique for evaluating stacked nanosheet inner spacer TDDB reliability
- Tian Shen
- K. Watanabe
- et al.
- 2020
- IRPS 2020
Plasma treatment effect on gate stack electrical properties
- Tao Li
- Chanro Park
- et al.
- 2018
- ANTS 2018
Leakage aware Si/SiGe CMOS FinFET for low power applications
- G. Tsutsui
- C. Durfee
- et al.
- 2018
- VLSI Technology 2018