Selective GeOx-scavenging from interfacial layer on Si1-xGex channel for high mobility Si/Si1-xGex CMOS applicationChoonghyun LeeH. Kimet al.2016VLSI Technology 2016
FINFET technology featuring high mobility SiGe channel for 10nm and beyondDechao GuoG. Karveet al.2016VLSI Technology 2016