Selective GeO_x-scavenging from interfacial layer on Si_1-xGe_x channel for high mobility Si/Si_1-xGe_x CMOS application

We demonstrate a technique for selective GeOx-scavenging which creates a GeOx-free IL on Si1-xGex substrates. This process reduces Nit by >60% to 2e11 and increases high-field mobility at Ninv=1e13 cm-2 by ∼1.3× in Si0.6Ge0.4 pFETs with sub-nm EOT.