Interaction of La2O3 capping layers with HfO 2 gate dielectrics
- M. Copel
- S. Guha
- et al.
- 2009
- Applied Physics Letters
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194 results for Vijay Narayanan
Interfacial layer optimization of high-k/metal gate stacks for low temperature processing
- Barry P. Linder
- Vijay Narayanan
- et al.
- 2009
- Microelectronic Engineering
Scaling the MOSFET gate dielectric: From high-k to higher-k? (Invited Paper)
- Martin M. Frank
- SangBum Kim
- et al.
- 2009
- Microelectronic Engineering
Quasi-damascene metal gate/high-k CMOS using oxygenation through gate electrodes
- Changhwan Choi
- Takashi Ando
- et al.
- 2009
- Microelectronic Engineering
Impact of metal gates on remote phonon scattering in titanium nitride/hafnium dioxide n -channel metal-oxide-semiconductor field effect transistors-low temperature electron mobility study
- Kingsuk Maitra
- Martin M. Frank
- et al.
- 2007
- Journal of Applied Physics
Recent advances and current challenges in the search for high mobility band-edge high-k/metal gate stacks
- V. Narayanan
- V.K. Paruchuri
- et al.
- 2007
- Microelectronic Engineering
Dual layer SrTiO3/HfO2 gate dielectric for aggressively scaled band-edge nMOS devices
- C. Choi
- E. Cartier
- et al.
- 2007
- Microelectronic Engineering
Impact of high-κ and SiO2 interfacial layer thickness on low-frequency (1/f) noise in aggressively scaled metal gate/HfO2 n-MOSFETs: role of high-κ phonons
- P. Srinivasan
- B.P. Linder
- et al.
- 2007
- Microelectronic Engineering
Interfacial microstructure of NiSix/HfO2/SiOx/Si gate stacks
- M. Gribelyuk
- C. Cabral Jr.
- et al.
- 2007
- Thin Solid Films
Examination of flatband and threshold voltage tuning of HfO2/TiN field effect transistors by dielectric cap layers
- S. Guha
- V.K. Paruchuri
- et al.
- 2007
- Applied Physics Letters