Investigation of fixed oxide charge and fin profile effects on bulk FinFET device characteristics
- Bomsoo Kim
- Dong-Il Bae
- et al.
- 2013
- IEEE Electron Device Letters
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62 results for Dechao Guo
Reverse temperature dependence of circuit performance in high- k/metal-gate technology
- Shu-Jen Han
- Dechao Guo
- et al.
- 2009
- IEEE Electron Device Letters
Gate-dielectric permitivity and metal-gate work-function tradeoff in Lmet = 25 nm PDSOI device characteristics
- Dechao Guo
- Andres Bryant
- et al.
- 2006
- IEEE Electron Device Letters
A Flexible and Inherently Self-Consistent Methodology for MOL/BEOL/MIMCAP TDDB Applications with Excessive Variability-Induced Degradation
- Ernest Wu
- Ron Bolam
- et al.
- 2022
- IRPS 2022
Highly Selective SiGe Dry Etch Process for the Enablement of Stacked Nanosheet Gate-All-Around Transistors
- Curtis Durfee
- Subhadeep Kal
- et al.
- 2021
- ECS Meeting 2021
Challenges and Opportunities for Stacked Transistor: DTCO and Device
- J. Wang
- S.D. Suk
- et al.
- 2021
- VLSI Technology 2021
TDDB Reliability in Gate-All-Around Nanosheet
- Huimei Zhou
- Miaomiao Wang
- et al.
- 2021
- IRPS 2021
Parasitic Resistance Reduction for Aggressively Scaled Stacked Nanosheet Transistors
- Su-Chen Fan
- Ruilong Xie
- et al.
- 2020
- IITC 2020
Middle of Line (MOL) Process Investigation in Ring Oscillator failure
- Victor Chan
- M. Bergendahl
- et al.
- 2020
- ASMC 2020
Selective Enablement of Dual Dipoles for near Bandedge Multi-Vt Solution in High Performance FinFET and Nanosheet Technologies
- Ruqiang Bao
- K. Watanabe
- et al.
- 2020
- VLSI Technology 2020