Conference paper
Improve variability in carbon nanotube FETs by scaling
Yanning Sun, George Tuleski, et al.
DRC 2010
The temperature dependence of ring-oscillator delay of high-k/metal- gate (HKMG) and poly-Si/SiON technologies are analyzed. HKMG gate stacks drive significantly stronger threshold temperature dependence over poly-Si/SiON. This effect, together with the reduced mobility temperature sensitivity, result in higher drive current at elevated temperature for HKMG devices. This is in contrast to poly-Si/SiON technology where the low-driven current performance-limiting corner is typically at high temperature. © 2009 IEEE.
Yanning Sun, George Tuleski, et al.
DRC 2010
Ruqiang Bao, Richard G. Southwick, et al.
VLSI Technology 2018
Hongsik Park, Ali Afzali, et al.
Nature Nanotechnology
Tao Chu, Reinaldo A. Vega, et al.
Journal of Applied Physics