First demonstration of symmetric lateral NPN transistors on SOI featuring epitaxially-grown emitter/collector regions
- Pouya Hashemi
- Jeng-Bang Yau
- et al.
- 2017
- S3S 2017
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53 results for Pouya Hashemi
High performance and low leakage current InGaAs-on-silicon FinFETs with 20 nm gate length
- Xiao Sun
- Christopher P. D’Emic
- et al.
- 2017
- VLSI Technology 2017
High performance and record subthreshold swing demonstration in scaled RMG SiGe FinFETs with high-Ge-content channels formed by 3D condensation and a novel gate stack process
- Pouya Hashemi
- Takashi Ando
- et al.
- 2017
- VLSI Technology 2017
High performance PMOS with strained high-Ge-content SiGe fins for advanced logic applications
- Pouya Hashemi
- Takashi Ando
- et al.
- 2017
- VLSI-TSA 2017
Prospects of high-Ge-content strained SiGe for advanced FinFET generations
- Pouya Hashemi
- Karthik Balakrishnan
- et al.
- 2016
- PRiME/ECS Meeting 2016
Demonstration of record SiGe transconductance and short-channel current drive in High-Ge-Content SiGe PMOS FinFETs with improved junction and scaled EOT
- Pouya Hashemi
- Kam-Leung Lee
- et al.
- 2016
- VLSI Technology 2016
FINFET technology featuring high mobility SiGe channel for 10nm and beyond
- Dechao Guo
- G. Karve
- et al.
- 2016
- VLSI Technology 2016
Replacement high-K/metal-gate High-Ge-content strained SiGe FinFETs with high hole mobility and excellent SS and reliability at aggressive EOT ∼7Å and scaled dimensions down to sub-4nm fin widths
- Pouya Hashemi
- Takashi Ando
- et al.
- 2016
- VLSI Technology 2016
First RF characterization of InGaAs replacement metal gate (RMG) nFETs on SiGe-OI FinFETs fabricated by 3D monolithic integration
- Veeresh Deshpande
- V. Djara
- et al.
- 2016
- EUROSOI-ULIS 2016
High-mobility high-Ge-content Si1-xGex-OI PMOS FinFETs with fins formed using 3D germanium condensation with Ge fraction up to x∼ 0.7, scaled EOT∼8.5Å and ∼10nm fin width
- Pouya Hashemi
- Takashi Ando
- et al.
- 2015
- VLSI Circuits 2015