Ernest Wu, Takashi Ando, et al.
Japanese Journal of Applied Physics
We developed an Al2O3/HfO2 bi-layer gate dielectric with an in-situ O3 treatment for interface state density (Dit) and gate leakage current density (Jg) reductions on SiGe channels. We observed Ge-content dependent equivalent oxide thickness (EOT) scaling and EOT 0.44 nm was achieved with an MOS capacitor with a Si0.05Ge0.95 substrate. The O3 treatment enabled application to non-planar device structures and we demonstrated five orders of magnitude lower off currents (Ioff), a sub-threshold slope of 68 mV/decade, and a very high hole mobility of 457 cm2V-1s-1 at an inversion carrier density (Ninv) of 1 × 1013 cm-2 for asymmetrically strained SiGe PMOSFETs with Ge% of 65%-70%.
Ernest Wu, Takashi Ando, et al.
Japanese Journal of Applied Physics
Martin Sandberg, Vivekananda P. Adiga, et al.
Applied Physics Letters
Takashi Ando, B. Kannan, et al.
VLSI Technology 2014
Y.Y. Wang, J. Li, et al.
Ultramicroscopy