V. Djara, Lukas Czornomaz, et al.
Solid-State Electronics
Three-dimensional (3D) monolithic integration can enable higher density and has the potential to stack independently optimized layers at transistor level. Owing to high mobility and lower processing temperatures, InGaAs is well-suited to be used as the top layer channel material in 3D monolithic integration along with Si/Si(Ge) FETs. A review of recent progress to develop InGaAs-on-Si(Ge) 3D Monolithic technology is presented here.
V. Djara, Lukas Czornomaz, et al.
Solid-State Electronics
Lukas Czornomaz, V. Djara, et al.
VLSI Technology 2016
V. Djara, Veeresh Deshpande, et al.
VLSI Technology 2015
Lukas Czornomaz, Veeresh Deshpande, et al.
ECS Meeting 2017 - New Orleans