Reliable Sub-Nanosecond Switching in Magnetic Tunnel Junctions for MRAM Applications
- Christopher Safranski
- Guohan Hu
- et al.
- 2021
- IEEE T-ED
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70 results for Daniel Worledge
Reliable 5 ns writing of spin-transfer torque MRAM
- Guohan Hu
- J. J. Nowak
- et al.
- 2019
- IEEE Magnetics Letters
Materials for spin-transfer-torque magnetoresistive random-access memory
- Shinji Yuasa
- Kazuhiro Hono
- et al.
- 2018
- MRS Bulletin
Theory of Spin Torque Switching Current for the Double Magnetic Tunnel Junction
- 2017
- IEEE Magnetics Letters
Dependence of Voltage and Size on Write Error Rates in Spin-Transfer Torque Magnetic Random-Access Memory
- J. J. Nowak
- Raphael P. Robertazzi
- et al.
- 2016
- IEEE Magnetics Letters
Materials investigation for thermally-assisted magnetic random access memory robust against 400°C temperatures
- A. Annunziata
- Philip Trouilloud
- et al.
- 2015
- Journal of Applied Physics
Perpendicular Magnetic Anisotropy and Easy Cone State in Ta/Co60Fe20B20/MgO
- Justin M. Shaw
- Hans T. Nembach
- et al.
- 2015
- IEEE Magnetics Letters
Electric field-induced ferromagnetic resonance in a CoFeB/MgO magnetic tunnel junction under dc bias voltages
- Shun Kanai
- Martin Gajek
- et al.
- 2014
- Applied Physics Letters
Development of perpendicularly magnetized Ta|CoFeB|MgO-based tunnel junctions at IBM (invited)
- D.C. Worledge
- G. Hu
- et al.
- 2014
- Journal of Applied Physics
Demonstration of bi-directional microwave-assisted magnetic reversal in synthetic ferrimagnets
- B.C. Koop
- Yu. I. Dzhezherya
- et al.
- 2013
- Applied Physics Letters