Quantification of local strain distributions in nanoscale strained SiGe FinFET structures
- Shogo Mochizuki
- Conal E. Murray
- et al.
- 2017
- Journal of Applied Physics
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59 results for Hemanth Jagannathan
High-precision deformation mapping in finFET transistors with two nanometre spatial resolution by precession electron diffraction
- David Cooper
- N. Bernier
- et al.
- 2017
- Applied Physics Letters
Study of phosphorus doped Si:C films formed by in situ doped Si epitaxy and implantation process for n-type metal-oxide-semiconductor devices
- Shogo Mochizuki
- Rainer Loesing
- et al.
- 2017
- JVSTB
SiO2 free HfO2 gate dielectrics by physical vapor deposition
- P. Jamison
- Takaaki Tsunoda
- et al.
- 2015
- IEEE T-ED
Physical characterization of sub-32-nm semiconductor materials and processes using advanced ion beam-based analytical techniques
- M. Hopstaken
- D. Pfeiffer
- et al.
- 2012
- Surface and Interface Analysis
Measurement of oxygen diffusion in nanometer scale HfO2 gate dielectric films
- Sufi Zafar
- Hemanth Jagannathan
- et al.
- 2011
- Applied Physics Letters
Integrating phase-change memory cell with Ge nanowire diode for crosspoint memory - Experimental demonstration and analysis
- SangBum Kim
- Yuan Zhang
- et al.
- 2008
- IEEE Transactions on Electron Devices
Templated germanium nanowire synthesis using oriented mesoporous organosilicate thin films
- Hemanth Jagannathan
- Michael Deal
- et al.
- 2006
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Effect of oxide overlayer formation on the growth of gold catalyzed epitaxial silicon nanowires
- Hemanth Jagannathan
- Yoshio Nishi
- et al.
- 2006
- Applied Physics Letters