Conference paperParasitic Resistance Reduction for Aggressively Scaled Stacked Nanosheet TransistorsSu-Chen Fan, Ruilong Xie, et al.IITC 2020
PaperFormation of Si:CP layer through in-situ doping and implantation process for n-type metal-oxide-semiconductor devicesShogo Mochizuki, Rainer Loesing, et al.Thin Solid Films
PaperHigh-precision deformation mapping in finFET transistors with two nanometre spatial resolution by precession electron diffractionDavid Cooper, N. Bernier, et al.Applied Physics Letters
Conference paperPrecession Electron Diffraction (PED) Strain Characterization in Stacked Nanosheet FET StructureJuntao Li, Shogo Mochizuki, et al.ISTFA 2022
