Conference paperTechnology viable DC performance elements for Si/SiGe channel CMOS FinFTTG. Tsutsui, Ruqiang Bao, et al.IEDM 2016
Conference paperAdvanced Arsenic Doped Epitaxial Growth for Source Drain Extension Formation in Scaled FinFET DevicesShogo Mochizuki, B. Colombeau, et al.IEDM 2018
Conference paperContact Cavity Shaping and Selective SiGe:B Low-Temperature Epitaxy Process Solution for sub 10-9 Ω.cm2 Contact Resistivity in Nonplanar FETsN. Breil, B.-C. Lee, et al.VLSI Technology 2023
Conference paperA 7nm FinFET technology featuring EUV patterning and dual strained high mobility channelsRuilong Xie, Pietro Montanini, et al.IEDM 2016
