Conference paperSiGe Channel CMOS: Understanding Dielectric Breakdown and Bias Temperature Instability TradeoffsRichard G. Southwick, Miaomiao Wang, et al.VLSI Technology 2019
Conference paperAdvanced Arsenic Doped Epitaxial Growth for Source Drain Extension Formation in Scaled FinFET DevicesShogo Mochizuki, B. Colombeau, et al.IEDM 2018
PaperHigh-precision deformation mapping in finFET transistors with two nanometre spatial resolution by precession electron diffractionDavid Cooper, N. Bernier, et al.Applied Physics Letters
Conference paperPrecession Electron Diffraction (PED) Strain Characterization in Stacked Nanosheet FET StructureJuntao Li, Shogo Mochizuki, et al.ISTFA 2022
