Reflow of copper on ruthenium
- C.-C. Yang
- Y. Loquet
- et al.
- 2011
- ADMETA 2011
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143 results for Daniel Edelstein
Robust ultrathin (20-25 nm) trilayer dielectric low k Cu damascene cap for sub-30 nm nanoelectronic devices
- Son Nguyen
- T. Haigh
- et al.
- 2011
- ECS Meeting 2011
Characterization of Cu reflows on Ru
- C.-C. Yang
- P. Flaitz
- et al.
- 2011
- IEEE Electron Device Letters
CVD Co capping layers for Cu/low-k interconnects: Cu em enhancement vs. Co thickness
- C.-C. Yang
- F. Baumann
- et al.
- 2011
- IITC/MAM 2011
Low-temperature reflow anneals of Cu on Ru
- C.-C. Yang
- Fenton R. McFeely
- et al.
- 2011
- IEEE Electron Device Letters
Characterization of copper electromigration dependence on selective chemical vapor deposited cobalt capping layer thickness
- C.-C. Yang
- F. Baumann
- et al.
- 2011
- IEEE Electron Device Letters
Evaluation of direct cu electroplating on Ru: Feature fill, parametric, and reliability
- C.-C. Yang
- B. Li
- et al.
- 2011
- IEEE Electron Device Letters
Stress control during thermal annealing of copper interconnects
- C.-C. Yang
- Christian Witt
- et al.
- 2011
- Applied Physics Letters
High reliability 32 nm Cu/ULK BEOL based on PVD CuMn seed, and its extendibility
- Takeshi Nogami
- Tibor Bolom
- et al.
- 2010
- IEDM 2010
Competitive and cost effective copper/low-k interconnect (BEOL) for 28nm CMOS technologies
- Rod Augur
- Craig Child
- et al.
- 2010
- ADMETA 2010