Publications

This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.

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193 results for Christian Lavoie

Nucleation and diffusion during growth of ternary Co1-x Nix Si2 thin films studied by complementary techniques in real time
- - D. Smeets
  - J. Demeulemeester
  - et al.
- 2008
- Journal of Applied Physics
Effect of Pt addition on growth stress and thermal stress of NiSi films
- - C. Van Bockstael
  - K. De Keyser
  - et al.
- 2008
- Journal of Applied Physics
Epitaxial formation of a metastable hexagonal nickel-silicide
- - K. De Keyser
  - C. Van Bockstael
  - et al.
- 2008
- Electrochemical and Solid-State Letters
Texture of NiSi films on Si(001), (111), and (110) substrates
- - C. Detavernier
  - J.L. Jordan-Sweet
  - et al.
- 2008
- Journal of Applied Physics
In-situ X-ray Diffraction study of Metal Induced Crystallization of amorphous silicon
- - W. Knaepen
  - C. Detavernier
  - et al.
- 2008
- Thin Solid Films
The role of lattice mismatch and kinetics in texture development: Co _1-xNi_xSi₂ thin films on Si(100)
- - D. Smeets
  - A. Vantomme
  - et al.
- 2008
- Journal of Applied Physics
Kinetics of Ni₃Si₂ formation in the Ni ₂Si-NiSi thin film reaction from in situ measurements
- - J.A. Kittl
  - M.A. Pawlak
  - et al.
- 2007
- Applied Physics Letters
Stress evolution during Ni-Si compound formation for fully silicided (FUSI) gates
- - C. Torregiani
  - C. Van Bockstael
  - et al.
- 2007
- Microelectronic Engineering
Ni-Pt silicide formation through Ti mediating layers
- - Paul Besser
  - Christian Lavoie
  - et al.
- 2007
- Microelectronic Engineering
Transient and end silicide phase formation in thin film Ni/polycrystalline-Si reactions for fully silicided gate applications
- - J.A. Kittl
  - M.A. Pawlak
  - et al.
- 2007
- Applied Physics Letters