Electrical characterization of FinFETs with fins formed by directed self assembly at 29 nm fin pitch using a self-aligned fin customization scheme
- Hsinyu Tsai
- Hiroyuki Miyazoe
- et al.
- 2014
- IEDM 2014
Publications
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43 results for David P. Klaus
Density scaling with gate-all-around silicon nanowire MOSFETs for the 10 nm node and beyond
- Sarunya Bangsaruntip
- K. Balakrishnan
- et al.
- 2013
- IEDM 2013
Trigate 6T SRAM scaling to 0.06 μm2
- M. Guillorn
- J. Chang
- et al.
- 2009
- IEDM 2009
Demonstration of highly scaled FinFET SRAM cells with high-Κ/metal gate and investigation of characteristic variability for the 32 nm node and beyond
- H. Kawasaki
- M. Khater
- et al.
- 2008
- IEDM 2008
Properties development during curing of low dielectric-constant spin-on glasses
- R.F. Cook
- E. Liniger
- et al.
- 1998
- MRS Spring Meeting 1998
High Performance 0.1 μm CMOS Devices with 1.5 V Power Supply
- Y. Taur
- S.J. Wind
- et al.
- 1993
- IEDM 1993
REACTIVE ION ETCHING OF MULTI-LAYER RESIST.
- H.Y. Ng
- D.P. Klaus
- et al.
- 1986
- MRS Fall Meeting 1986
Demonstration of a High-Fidelity cnot Gate for Fixed-Frequency Transmons with Engineered Suppression
- Abhinav Kandala
- Ken X. Wei
- et al.
- 2021
- Physical Review Letters
Tunable Coupling Architecture for Fixed-Frequency Transmon Superconducting Qubits
- J. Stehlik
- D.M. Zajac
- et al.
- 2021
- Physical Review Letters
Two-dimensional pattern formation using graphoepitaxy of PS-b-PMMA block copolymers for advanced FinFET device and circuit fabrication
- Hsinyu Tsai
- Jed W. Pitera
- et al.
- 2014
- ACS Nano