Recent advances in search for suitable high-k/metal gate solutions to replace SiON/Poly-silicon gate stacks in CMOS devices for 45nm and beyond technologies
- B.P. Linder
- V.K. Paruchuri
- et al.
- 2007
- ECS Meeting 2007
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118 results for Supratik Guha
Band-edge high-performance high-κ /metal gate n-MOSFETs using cap layers containing group IIA and IIIB elements with gate-first processing for 45 nm and beyond
- V. Narayanan
- V.K. Paruchuri
- et al.
- 2006
- VLSI Technology 2006
Poly-Si/AlN/HfSiO stack for ideal threshold voltage and mobility in sub-100 nm MOSFETs
- K.-L. Lee
- M.M. Frank
- et al.
- 2006
- VLSI Technology 2006
Charge defects, Vt shifts, and the solution to the high-k metal gate n-MOSFET problem
- Supratik Guha
- Vijay Narayanan
- et al.
- 2006
- Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 2006
Negative differential resistance in ultra-thin Ge-on-insulator FETs
- D. Kazazis
- A. Zaslavsky
- et al.
- 2006
- ISTDM 2006
Role of oxygen vacancies in VFB/Vt stability of pFET metals on HfO2
- E. Cartier
- F.R. McFeely
- et al.
- 2005
- VLSI Technology 2005
Optimization of high κ gate stacks with poly-Si, FUSI and metal electrodes
- R. Jammy
- V. Narayanan
- et al.
- 2005
- ISTC 2005
Germanium-on-Si MOSFETS with HFO 2 gate dielectric
- J.P. Donnelly
- J. Chen
- et al.
- 2005
- ECS Meeting 2005
Poly-Si/high-k gate stacks with near-ideal threshold voltage and mobility
- M.M. Frank
- V.K. Paruchuri
- et al.
- 2005
- VLSI-TSA 2005
Effect of surface nitridation on the Ge/HfO2 interface
- R. Garg
- D. Misra
- et al.
- 2005
- ECS Meeting 2005