Rapid and Holistic Technology Evaluation for Exploratory DTCO in beyond 7nm Technologies
- Myung-Hee Na
- Albert Chu
- et al.
- 2018
- SISPAD 2018
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16 results for Myung-Hee Na
Accurate performance evaluation for the horizontal nanosheet standard-cell design space beyond 7nm technology
- Yoo-Mi Lee
- Myung-Hee Na
- et al.
- 2017
- IEDM 2017
Stacked nanosheet gate-all-around transistor to enable scaling beyond FinFET
- N. Loubet
- T.B. Hook
- et al.
- 2017
- VLSI Technology 2017
A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels
- Ruilong Xie
- Pietro Montanini
- et al.
- 2016
- IEDM 2016
Performance trade-offs in FinFET and gate-all-around device architectures for 7nm-node and beyond
- Seong-Dong Kim
- Michael Guillorn
- et al.
- 2015
- S3S 2015
Bottom oxidation through STI (BOTS) - A novel approach to fabricate dielectric isolated FinFETs on bulk substrates
- K. Cheng
- S.-C. Seo
- et al.
- 2014
- VLSI Technology 2014
Revisiting the impact on sub-threshold regions in uniaxially-strained FETs
- M.H. Na
- K. Mcstay
- et al.
- 2013
- CSTIC 2013
New layout dependency in high-k/metal gate MOSFETs
- M. Hamaguchi
- Deleep R. Nair
- et al.
- 2011
- IEDM 2011
A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications
- S. Krishnan
- U. Kwon
- et al.
- 2011
- IEDM 2011
Novel high-performance analog devices for advanced low-power high-k metal gate complementary metal-oxide-semiconductor technology
- Jin-Ping Han
- Takashi Shimizu
- et al.
- 2011
- Japanese Journal of Applied Physics