High performance bulk planar 20nm CMOS technology for low power mobile applications
- Huiling Shang
- Sameer Jain
- et al.
- 2012
- VLSI Technology 2012
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22 results for Michael Belyansky
Performance elements for 28nm gate length bulk devices with gate first high-k metal gate
- Jun Yuan
- C. Gruensfelder
- et al.
- 2010
- ICSICT 2010
Stress liner effects for 32-nm SOI MOSFETs with HKMG
- Ming Cai
- Karthik Ramani
- et al.
- 2010
- IEEE T-ED
Study of silicon strain in shallow trench isolation
- M. Belyansky
- N. Klymko
- et al.
- 2010
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
High performance 32nm SOI CMOS with high-k/metal gate and 0.149μm 2 SRAM and ultra low-k back end with eleven levels of copper
- B. Greene
- Q. Liang
- et al.
- 2009
- VLSI Technology 2009
Blanket SMT with in situ N2 plasma treatment on the lang;100〉 wafer for the low-cost low-power technology application
- Jun Yuan
- Victor Chan
- et al.
- 2009
- IEEE Electron Device Letters
Extending dual stress liner process to high performance 32nm node SOI CMOS manufacturing
- M. Cai
- B. Greene
- et al.
- 2008
- IEEE International SOI Conference 2008
SMT and enhanced SPT with Recessed SD to improve CMOS Device Performance
- S. Fang
- S.S. Tan
- et al.
- 2008
- ICSICT 2008
High performance 45-nm SOI technology with enhanced strain, porous low-k BEOL, and immersion lithography
- S. Narasimha
- K. Onishi
- et al.
- 2006
- IEDM 2006
Stress proximity technique for performance improvement with dual stress liner at 45nm technology and beyond
- X. Chen
- S. Fang
- et al.
- 2006
- VLSI Technology 2006