The effect of voltage bias stress on temperature-dependent conduction properties of low-k dielectrics
- Joanna Atkin
- T.M. Shaw
- et al.
- 2012
- IRPS 2012
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148 results for Thomas M. Shaw
Robust ultrathin (20-25 nm) trilayer dielectric low k Cu damascene cap for sub-30 nm nanoelectronic devices
- Son Nguyen
- T. Haigh
- et al.
- 2011
- ECS Meeting 2011
Interconnect processes and reliability for RF technology
- Jeffrey P. Gambino
- F. Anderson
- et al.
- 2011
- IPFA 2011
Optimization of porous ultra low- dielectrics (κ≤ 2.55) for 28nm generation
- D. Kioussis
- E.T. Ryan
- et al.
- 2011
- IITC/MAM 2011
Processing and moisture effects on TDDB for Cu/ULK BEOL structures
- Eric G. Liniger
- T.M. Shaw
- et al.
- 2010
- ADMETA 2010
Competitive and cost effective copper/low-k interconnect (BEOL) for 28nm CMOS technologies
- Rod Augur
- Craig Child
- et al.
- 2010
- ADMETA 2010
CoWP metal caps for reliable 32 nm 1X Cu interconnects in porous ULK (k=2.4)
- E. Huang
- M. Oh
- et al.
- 2009
- ADMETA 2009
Ultrathin (5-35 nm) SiCNH dielectrics for damascene Cu Cap application: Thickness scaling and oxidation barrier performance limitation
- Son Nguyen
- T. Haigh Jr.
- et al.
- 2010
- ECS Meeting 2010
CVD Co and its application to Cu damascene interconnections
- Takeshi Nogami
- J. Maniscalco
- et al.
- 2010
- IITC 2010
Reliability of a 300-mm-compatible 3DI technology based on hybrid Cu-adhesive wafer bonding
- R.R. Yu
- F. Liu
- et al.
- 2009
- VLSI Technology 2009