65nm Cu integration and interconnect reliability in low stress K=2.75 SiCOH
- V. McGahay
- G. Bonilla
- et al.
- 2006
- IITC 2006
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148 results for Thomas M. Shaw
Theory for electromigration failure in Cu conductors
- J.R. Lloyd
- C.E. Murray
- et al.
- 2005
- International Workshop on Stress-Induced Phenomena in Metallization 2005
Role of oxygen vacancies in VFB/Vt stability of pFET metals on HfO2
- E. Cartier
- F.R. McFeely
- et al.
- 2005
- VLSI Technology 2005
Effect of moisture on the Time Dependent Dielectric Breakdown (TDDB) behavior in an ultra-low-k (ULK) dielectric
- J.R. Lloyd
- T.M. Shaw
- et al.
- 2005
- IIRW 2005
Low-k BEOL mechanical modeling
- Xiao Hu Liu
- Michael W. Lane
- et al.
- 2004
- ADMETA 2004
Reliability, yield, and performance of a 90 nm SOI/Cu/SiCOH technology
- D. Edelstein
- C.R. Davis
- et al.
- 2004
- IITC 2004
Chip-to-Package Interaction for a 90 nm Cu / PECVD Low-k technology
- W. Landers
- D. Edelstein
- et al.
- 2004
- IITC 2004
Optimization of SiCOH dielectrics for integration in a 90 nm CMOS technology
- A. Grill
- D. Edelstein
- et al.
- 2004
- IITC 2004
Channel cracking in low-k films on patterned multi-layers
- X.-H. Liu
- T.M. Shaw
- et al.
- 2004
- IITC 2004
90 nm SiCOH technology in 300 mm manufacturing
- L. Clevenger
- M. Yoon
- et al.
- 2004
- ADMETA 2004