The evolution of optical and electrical properties of low-k dielectrics under bias stress

Abstract

Photocurrent spectroscopy and transient photocurrent measurements are employed in order to investigate the change in barrier heights and density of traps within low-k dielectric films under bias stressing conditions. By characterizing these fundamental physical properties, we hope to gain an understanding of the processes leading to time-dependent dielectric breakdown. © 2009 Elsevier B.V. All rights reserved.