Extendibility study of a PVD Cu seed process with Ar+ Rf-Plasma enhanced coverage for 45nm interconnects
- Andrew H. Simon
- Tibor Bolom
- et al.
- 2008
- MRS Spring Meeting 2008
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16 results for S. Grunow
Comparison of electromigration in Cu interconnects with atomic-layer- or physical-vapor-deposited TaN liners
- C.-K. Hu
- L. Gignac
- et al.
- 2007
- JES
High performance 45-nm SOI technology with enhanced strain, porous low-k BEOL, and immersion lithography
- S. Narasimha
- K. Onishi
- et al.
- 2006
- IEDM 2006
A 45 nm CMOS node Cu/low-k/ ULtra low-k PECVD SiCOH (k=2.4) BEOL technology
- S. Sankaran
- S. Arai
- et al.
- 2006
- IEDM 2006
Comparison of electromigration in Cu interconnects with ALD or PVD TaN liners
- C.-K. Hu
- L. Gignac
- et al.
- 2006
- ECS Meeting 2006
65nm Cu integration and interconnect reliability in low stress K=2.75 SiCOH
- V. McGahay
- G. Bonilla
- et al.
- 2006
- IITC 2006