Novel approach to reduce source/drain series resistance in high performance CMOS devices using self-aligned CoWP process for 45nm node UTSOI transistors with 20nm gate length
- James Pan
- Anna Topol
- et al.
- 2006
- VLSI Technology 2006
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12 results for John Pellerin
High performance 65 nm SOI technology with dual stress liner and low capacitance SRAM cell
- E. Leobandung
- H. Nayakama
- et al.
- 2005
- VLSI Technology 2005