Enhancement-mode in0.70Ga0.30As-channel MOSFETs with ALD Al2O3
- Yanning Sun
- E.W. Kiewra
- et al.
- 2007
- DRC 2007
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25 results for Yanning Sun
In-situ MBE Si as passivating interlayer on GaAs for HfO2 MOSCAP's: effect of GaAs surface reconstruction
- D.J. Webb
- J. Fompeyrine
- et al.
- 2007
- Microelectronic Engineering
Enhancement-mode buried-channel In0.7Ga0.3As/ In0.52Al0.48 MOSFETs with high-κ gate dielectrics
- Yanning Sun
- E.W. Kiewra
- et al.
- 2007
- IEEE Electron Device Letters
Investigation of FinFET devices for 32nm technologies and beyond
- H. Shang
- L. Chang
- et al.
- 2006
- VLSI Technology 2006
High mobility channels for ultimate CMOS
- D.K. Sadana
- S.J. Koester
- et al.
- 2006
- ECS Meeting 2006