Wafer-scale epitaxial graphene growth on the Si-face of hexagonal SiC (0001) for high frequency transistors
- Christos Dimitrakopoulos
- Yu-Ming Lin
- et al.
- 2010
- Journal of Vacuum Science and Technology B
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25 results for Yanning Sun
Decoupling graphene from SiC(0001) via oxidation
- Satoshi Oida
- Fenton R. McFeely
- et al.
- 2010
- Physical Review B - CMMP
InGaAs channel MOSFET with self-aligned source/drain MBE regrowth technology
- Uttam Singisetti
- Mark A. Wistey
- et al.
- 2009
- Physica Status Solidi (C) Current Topics in Solid State Physics
Inversion mode n -channel GaAs field effect transistor with high- k /metal gate
- J.P. De Souza
- E.W. Kiewra
- et al.
- 2008
- Applied Physics Letters
In-situ MBE Si as passivating interlayer on GaAs for HfO2 MOSCAP's: effect of GaAs surface reconstruction
- D.J. Webb
- J. Fompeyrine
- et al.
- 2007
- Microelectronic Engineering