Frank R. Libsch, Takatoshi Tsujimura
Active Matrix Liquid Crystal Displays Technology and Applications 1997
We report a study of MOS capacitors having a dielectric of HfO2 and an interlayer of Si deposited in-situ, by MBE on GaAs surfaces prepared with various surface-reconstructions. Interface state densities of about 1 × 1012 eV-1cm-2 have been obtained. Capacitors on the Ga-rich surface, measured with peripheral illumination, show signs of a possible inversion layer. © 2007 Elsevier B.V. All rights reserved.
Frank R. Libsch, Takatoshi Tsujimura
Active Matrix Liquid Crystal Displays Technology and Applications 1997
A. Krol, C.J. Sher, et al.
Surface Science
Oliver Schilter, Alain Vaucher, et al.
Digital Discovery
Fernando Marianno, Wang Zhou, et al.
INFORMS 2021