CMOS scaling beyond 22 nm node
D.K. Sadana, S.W. Bedell, et al.
ECS Meeting 2009
The operation of long- and short-channel enhancement-mode In0.7Ga0.3As-channel MOSFETs with high-κ gate dielectrics are demonstrated for the first time. The devices utilize an undoped buried-channel design. For a gate length of 5 μm, the long-channel devices have Vt a subthreshold slope of 150 mV/ dec, an equivalent oxide thickness of 4.4 +/- 0.3 nm, and a peak effective mobility of 1100cm2 For a gate length of 260 nm, the short-channel devices have Vt and a subthreshold slope of 200 mV/dec. Compared with Schottky-gated high-electron-mobility transistor devices, both long- and short-channel MOSFETs have two to four orders of magnitude lower gate leakage. © 2007 IEEE.
D.K. Sadana, S.W. Bedell, et al.
ECS Meeting 2009
Uttam Singisetti, Mark A. Wistey, et al.
Physica Status Solidi (C) Current Topics in Solid State Physics
S.J. Koester, K. Ismail, et al.
Semiconductor Science and Technology
D. Singh, L.T. Shi, et al.
Journal of Electronic Materials