Scaling of ino.7gao.3as buried-channel MOSFETs
Yanning Sun, E.W. Kiewra, et al.
IEDM 2008
The operation of long- and short-channel enhancement-mode In0.7Ga0.3As-channel MOSFETs with high-κ gate dielectrics are demonstrated for the first time. The devices utilize an undoped buried-channel design. For a gate length of 5 μm, the long-channel devices have Vt a subthreshold slope of 150 mV/ dec, an equivalent oxide thickness of 4.4 +/- 0.3 nm, and a peak effective mobility of 1100cm2 For a gate length of 260 nm, the short-channel devices have Vt and a subthreshold slope of 200 mV/dec. Compared with Schottky-gated high-electron-mobility transistor devices, both long- and short-channel MOSFETs have two to four orders of magnitude lower gate leakage. © 2007 IEEE.
Yanning Sun, E.W. Kiewra, et al.
IEDM 2008
L. Schares, C.L. Schow, et al.
OFC/NFOEC 2006
R. Hammond, S.J. Koester, et al.
Electronics Letters
Xiao Sun, Christopher P. D’Emic, et al.
VLSI Technology 2017