Essential edge protection techniques for successful multi-wafer stacking
- Joshua Rubin
- Kevin Winstel
- et al.
- 2015
- S3S 2015
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74 results for Vamsi Paruchuri
SiO2 free HfO2 gate dielectrics by physical vapor deposition
- P. Jamison
- Takaaki Tsunoda
- et al.
- 2015
- IEEE T-ED
Through-Cobalt Self Forming Barrier (tCoSFB) for Cu/ULK BEOL: A novel concept for advanced technology nodes
- Takeshi Nogami
- Benjamin D. Briggs
- et al.
- 2015
- IEDM 2015
Formation of Si:CP layer through in-situ doping and implantation process for n-type metal-oxide-semiconductor devices
- Shogo Mochizuki
- Rainer Loesing
- et al.
- 2014
- Thin Solid Films
10nm FINFET technology for low power and high performance applications
- D. Guo
- H. Shang
- et al.
- 2014
- ICSICT 2014
The past, present and future of high-k/metal gates
- Kisik Choi
- Takashi Ando
- et al.
- 2013
- ECS Meeting 2013
Mechanism for leakage reduction by la incorporation in a HfO 2SiO2Si gate stack
- Kenzo Manabe
- Koji Watanabe
- et al.
- 2013
- IEEE Electron Device Letters
Microstructure development in epitaxially grown in-situ Boron and Carbon co-doped strained 60% Silicon-Germanium layers
- Alexander Reznicek
- Thomas N. Adam
- et al.
- 2012
- ECS Meeting 2012
Phenomena of dielectric capping layer insertion into high-κ metal gate stacks in gate-first/gate-last integration
- H. Jagannathan
- P. Jamison
- et al.
- 2012
- ECS Meeting 2012
A novel low resistance gate fill for extreme gate length scaling at 20nm and beyond for gate-last high-k/metal gate CMOS technology
- U. Kwon
- K. Wong
- et al.
- 2012
- VLSI Technology 2012