Shiyi Chen, Daniel Martínez, et al.
Physics of Fluids
Paper
Formation of Si:CP layer through in-situ doping and implantation process for n-type metal-oxide-semiconductor devices
Abstract
In this study, the effect of Cluster Carbon implantation and thermal annealing for recrystallization on the properties of phosphorus doped Si (Si
Related
Shu-Jen Han, Dharmendar Reddy, et al.
ACS Nano
Ronald Troutman
Synthetic Metals
R. Ghez, M.B. Small
JES