Publications

This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.

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74 results for Vamsi Paruchuri

Electron mobility limited by remote charge scattering in thin (100)- and (110)-oriented silicon body double-gated metal-oxide-semiconductor field-effect transistors with high-k gate dielectrics
- - Ryosuke Iijima
  - Lisa F. Edge
  - et al.
- 2012
- Japanese Journal of Applied Physics
Effect of thermal annealing on carbon in in-situ phosphorous-doped Si _1-xC _x films
- - Thomas Adam
  - Nicolas Loubet
  - et al.
- 2012
- Thin Solid Films
Intrinsic effects of the crystal orientation difference between (100) and (110) silicon substrates on characteristics of high-k/metal gate metal-oxide-semiconductor field-effect transistors
- - Ryosuke Iijima
  - Lisa F. Edge
  - et al.
- 2011
- Japanese Journal of Applied Physics
Physical mechanism of threshold voltage modulation by ge channel ion implantation in the TiN/HfO₂ gate stack systems
- - Yoshinori Tsuchiya
  - Nathaniel Berliner
  - et al.
- 2011
- Japanese Journal of Applied Physics
Characteristics of La₂O₃-and Al₂O ₃-capped HfO₂ dielectric metal-oxide-semiconductor field-effect transistors fabricated on (110)-oriented silicon substrates
- - Ryosuke Iijima
  - Lisa F. Edge
  - et al.
- 2011
- Japanese Journal of Applied Physics
Gate capacitance reduction due to the inversion layer in high-k/metal gate stacks within a subnanometer EOT regime
- - Ryosuke Iijima
  - Lisa F. Edge
  - et al.
- 2011
- IEEE T-ED
Materials and electrical characterization of physical vapor deposited La_x Lu_1-x Oinf₃ thin films on 300 mm silicon
- - L.F. Edge
  - T. Vo
  - et al.
- 2011
- Applied Physics Letters
Characterization of inversion-layer capacitance of electrons in high-k/metal gate stacks
- - Ryosuke Iijima
  - Lisa F. Edge
  - et al.
- 2010
- IEEE T-ED
Interaction of La₂O₃ capping layers with HfO ₂ gate dielectrics
- - M. Copel
  - S. Guha
  - et al.
- 2009
- Applied Physics Letters
Recent advances and current challenges in the search for high mobility band-edge high-k/metal gate stacks
- - V. Narayanan
  - V.K. Paruchuri
  - et al.
- 2007
- Microelectronic Engineering