Dual beam laser annealing for contact resistance reduction and its impact on VLSI integrated circuit variabilityZuoguang LiuOleg Gluschenkovet al.2017VLSI Technology 2017
FinFET performance with Si:P and Ge:Group-III-Metal metastable contact trench alloysOleg GluschenkovZuoguang Liuet al.2016IEDM 2016
Technology viable DC performance elements for Si/SiGe channel CMOS FinFTTG. TsutsuiRuqiang Baoet al.2016IEDM 2016
Sub-10-9 Ω-cm2 n-Type Contact Resistivity for FinFET TechnologyHiroaki NiimiZuoguang Liuet al.2016IEEE Electron Device Letters