FinFET performance with Si:P and Ge:Group-III-Metal metastable contact trench alloys

Oleg Gluschenkov; Zuoguang Liu; Hiroaki Niimi; Shogo Mochizuki; Jody Fronheiser; X. Miao; Juntao Li; J. Demarest; Chen Zhang; Chengyu Niu; Bei Liu; A. Filip Petrescu; Praneet Adusumilli; J. Yang; H. Jagannathan; Huiming Bu; Tenko Yamashita

doi:10.1109/IEDM.2016.7838437

IEDM 2016

Conference paper

31 Jan 2017

FinFET performance with Si:P and Ge:Group-III-Metal metastable contact trench alloys

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Abstract

We achieved mid-10-10 Ω-cm2 n-type S/D contact resistivity (npc) and 1.9×10-9 Ω-cm2 p-type S/D contact resistivity (ppc) by employing laser-induced liquid or solid phase epitaxy (LPE/SPE) of Si

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