Sub-10-9 Ω-cm2 n-Type Contact Resistivity for FinFET Technology

Paper

01 Nov 2016

Sub-10^-9 Ω-cm² n-Type Contact Resistivity for FinFET Technology

We report record low 8.4 × 10-10Ω-cm2 n-type S/D contact resistivity with laser-induced solid/liquid phase epitaxy of Si

Conference paper

Oleg Gluschenkov, H. Jagannathan

ECS Meeting 2018

Conference paper

Takeshi Nogami, Oleg Gluschenkov, et al.

VLSI Technology and Circuits 2022

Conference paper

Michael A. Gribelyuk, Jun Yuan, et al.

IWJT 2009

Conference paper

Heng Wu, Soon-Cheon Seo, et al.

IEDM 2017